All IGBT. IXGR64N60A3 Datasheet

 

IXGR64N60A3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGR64N60A3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 47(110°C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Qgⓘ - Total Gate Charge, typ: 167 nC
   Package: ISOPLUS247

 IXGR64N60A3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGR64N60A3 Datasheet (PDF)

 ..1. Size:183K  ixys
 ixgr64n60a3.pdf

IXGR64N60A3 IXGR64N60A3

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGR64N60A3IC110 = 47AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingISOPLUS247TM (IXGR)Symbol Test Conditions Maximum RatingsE153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 11

 9.1. Size:169K  ixys
 ixgr6n170a.pdf

IXGR64N60A3 IXGR64N60A3

Advance Technical InformationHigh Voltage IGBT VCES = 1700VIXGR6N170AIC25 = 5.5A VCE(sat) 7.0V tfi(typ) = 32ns(Electrically Isolated Tab)Symbol Test Conditions Maximum RatingsISOPLUS247TMVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 5.5 A CIsolated Ta

 9.2. Size:109K  ixys
 ixgr60n60u1.pdf

IXGR64N60A3 IXGR64N60A3

VCES = 600 VLow VCE(sat) IGBT IXGR 60N60U1IC25 = 75 Awith DiodeVCE(sat) = 1.7 VISOPLUS247TM(Electrically Isolated Back Surface)Preliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C 75 A EIsolated back surface*IC100

 9.3. Size:505K  ixys
 ixgr60n60c2.pdf

IXGR64N60A3 IXGR64N60A3

IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti

 9.4. Size:511K  ixys
 ixgr60n60b2d1.pdf

IXGR64N60A3 IXGR64N60A3

Advance Technical DataIXGR 60N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 100 ns(Electrically Isolated Back Surface)D1Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC(ISOLAT

 9.5. Size:214K  ixys
 ixgr60n60c3d1.pdf

IXGR64N60A3 IXGR64N60A3

TMVCES = 600VGenX3 600V IGBTIXGR60N60C3D1IC110 = 30Aw/ DiodeVCE(sat) 2.5V(Electrically Isolated Back Surface)tfi(typ) = 50nsHigh Speed PT IGBT for40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC

 9.6. Size:180K  ixys
 ixgr60n60c2c1.pdf

IXGR64N60A3 IXGR64N60A3

HiperFASTTM IGBT VCES = 600VIXGR60N60C2C1w/ SiC Anti-Parallel IC110 = 39ADiode VCE(sat) 2.7Vtfi(typ) = 54ns(Electrically Isolated Back Surface)ISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25

 9.7. Size:505K  ixys
 ixgr60n60c2d1.pdf

IXGR64N60A3 IXGR64N60A3

IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti

 9.8. Size:192K  ixys
 ixgr60n60c3c1.pdf

IXGR64N60A3 IXGR64N60A3

GenX3TM 600V IGBT VCES = 600VIXGR60N60C3C1w/ SiC Anti-Parallel IC110 = 30ADiode VCE(sat) 2.5Vtfi(typ) = 50ns(Electrically Isolated Back Surface)High Speed PT IGBT for 40-100kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC Isolated T

 9.9. Size:511K  ixys
 ixgr60n60b2.pdf

IXGR64N60A3 IXGR64N60A3

Advance Technical DataIXGR 60N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 100 ns(Electrically Isolated Back Surface)D1Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC(ISOLAT

Datasheet: IXGR55N120A3H1 , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , FGH40N60UFD , IXGR6N170A , IXGR72N60A3 , IXGR72N60A3H1 , IXGR72N60B3D1 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A .

 

 
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