IXGR64N60A3 Specs and Replacement
Type Designator: IXGR64N60A3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 47(110°C) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35(max) V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 270 pF
Package: ISOPLUS247
IXGR64N60A3 Substitution - IGBTⓘ Cross-Reference Search
IXGR64N60A3 datasheet
ixgr64n60a3.pdf
Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGR64N60A3 IC110 = 47A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching ISOPLUS247TM (IXGR) Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 11... See More ⇒
ixgr6n170a.pdf
Advance Technical Information High Voltage IGBT VCES = 1700V IXGR6N170A IC25 = 5.5A VCE(sat) 7.0V tfi(typ) = 32ns (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 5.5 A C Isolated Ta... See More ⇒
ixgr60n60u1.pdf
VCES = 600 V Low VCE(sat) IGBT IXGR 60N60U1 IC25 = 75 A with Diode VCE(sat) = 1.7 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C 75 A E Isolated back surface* IC100 ... See More ⇒
ixgr60n60c2.pdf
IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (ISOLATED TAB) VGES Conti... See More ⇒
Specs: IXGR55N120A3H1, IXGR60N60B2, IXGR60N60B2D1, IXGR60N60C2, IXGR60N60C2C1, IXGR60N60C2D1, IXGR60N60C3C1, IXGR60N60C3D1, MBQ60T65PES, IXGR6N170A, IXGR72N60A3, IXGR72N60A3H1, IXGR72N60B3D1, IXGR72N60B3H1, IXGR72N60C3D1, IXGT10N170, IXGT10N170A
Keywords - IXGR64N60A3 transistor spec
IXGR64N60A3 cross reference
IXGR64N60A3 equivalent finder
IXGR64N60A3 lookup
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