IXGT28N60BD1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT28N60BD1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2(max) V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 170 pF

Encapsulados: TO268

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IXGT28N60BD1 datasheet

 ..1. Size:56K  ixys
 ixgh28n60bd1 ixgt28n60bd1.pdf pdf_icon

IXGT28N60BD1

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 8

 ..2. Size:515K  ixys
 ixgt28n60bd1.pdf pdf_icon

IXGT28N60BD1

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A

 4.1. Size:588K  ixys
 ixgt28n60b.pdf pdf_icon

IXGT28N60BD1

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

 7.1. Size:93K  ixys
 ixgh28n30b ixgt28n30b.pdf pdf_icon

IXGT28N60BD1

IXGH 28N30B VCES = 300 V HiPerFASTTM IGBT IXGT 28N30B IC25 = 56 A VCE(sat)typ = 2.1 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C56 A TO-268 IC90 TC = 90 C28 A (IXGT) ICM TC = 25 C, 1 ms 112 A G SSOA VGE= 15 V, TV

MOSTRAR MÁS

Otros transistores... IXGT22N170, IXGT24N170, IXGT24N170A, IXGT24N170AH1, IXGT25N160, IXGT25N250, IXGT28N120B, IXGT28N120BD1, SGT60N60FD1P7, IXGT2N250, IXGT30N120B3D1, IXGT30N60B, IXGT30N60B2, IXGT30N60B2D1, IXGT30N60C2, IXGT30N60C2D1, IXGT30N60C3D1