IXGT28N60BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGT28N60BD1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 170 pF
Qgⓘ - Carga total de la puerta, typ: 68 nC
Paquete / Cubierta: TO268
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IXGT28N60BD1 Datasheet (PDF)
ixgh28n60bd1 ixgt28n60bd1.pdf
Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEVGES Continuous 20 VC (TAB)VGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 8
ixgt28n60bd1.pdf
Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VCombi PackSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 80 A
ixgt28n60b.pdf
Low VCE(sat) IGBT IXGH 28N60B VCES = 600 VIXGT 28N60B IC25 = 40 AVCE(sat) = 2.0 VSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C40 A(IXGH)IC90 TC = 90C28 AICM TC = 25C, 1 ms 80 AC (TAB)SSOA VGE = 15 V,
ixgh28n30b ixgt28n30b.pdf
IXGH 28N30BVCES = 300 VHiPerFASTTM IGBTIXGT 28N30BIC25 = 56 AVCE(sat)typ = 2.1 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VVGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25 C56 ATO-268IC90 TC = 90 C28 A(IXGT)ICM TC = 25 C, 1 ms 112 AGSSOA VGE= 15 V, TV
ixgh28n30a ixgt28n30a.pdf
IXGH 28N30A VCES = 300 VHiPerFASTTM IGBTIXGT 28N30A IC25 = 56 AVCE(sat)typ = 1.85 Vtfi(typ) = 120 nsPreliminary dataTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25 C to 150 C 300 VGVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VC(TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-268(IXGT)IC25 TC = 25 C56 AIC90 TC = 90 C28 A GEICM TC = 25 C, 1
ixgh28n120b ixgt28n120b.pdf
IXGH 28N120B VCES = 1200 VHigh Voltage IGBTIXGT 28N120B IC25 = 50 AVCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C50 ATO-247 AD (IXGH)IC110 TC = 110C28 AICM TC = 25C, 1 ms 150 A
ixgt28n90b.pdf
IXGH 28N90B VCES = 900 VHiPerFASTTM IGBTIXGT 28N90B IC25 = 51 AVCE(SAT) = 2.7 VPreliminary data sheettfi(typ) = 130 nsSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C51 AIC110 TC = 110C28 ATO-268 (D3)ICM TC =
ixgh28n30 ixgt28n30.pdf
IXGH 28N30 VCES = 300 VHiPerFASTTM IGBTIXGT 28N30 IC25 = 56 AVCE(sat)typ = 1.6 Vtfi(typ) = 180 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VGEVGES Continuous 20 V(TAB)VGEM Transient 30 VIC25 TC = 25 C56 ATO-247 ADIC90 TC = 90 C28 AICM TC = 25 C, 1 ms 112 ASSOA VGE
ixgt28n120b.pdf
IXGH 28N120B VCES = 1200 VHigh Voltage IGBTIXGT 28N120B IC25 = 50 AVCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C50 ATO-247 AD (IXGH)IC110 TC = 110C28 AICM TC = 25C, 1 ms 150 A
ixgt28n120bd1.pdf
High Voltage IGBT VCES = 1200VIXGH28N120BD1w/ Diode IC25 = 50AIXGT28N120BD1VCE(sat) 3.5Vtfi(typ) = 170nsTO-247AD (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VCE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 50 AI
Otros transistores... IXGT22N170 , IXGT24N170 , IXGT24N170A , IXGT24N170AH1 , IXGT25N160 , IXGT25N250 , IXGT28N120B , IXGT28N120BD1 , GT30G124 , IXGT2N250 , IXGT30N120B3D1 , IXGT30N60B , IXGT30N60B2 , IXGT30N60B2D1 , IXGT30N60C2 , IXGT30N60C2D1 , IXGT30N60C3D1 .
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