IXGT30N60C2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT30N60C2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 190 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 110 pF

Encapsulados: TO268

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IXGT30N60C2 datasheet

 ..1. Size:583K  ixys
 ixgh30n60c2 ixgt30n60c2.pdf pdf_icon

IXGT30N60C2

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

 ..2. Size:580K  ixys
 ixgt30n60c2.pdf pdf_icon

IXGT30N60C2

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

 0.1. Size:164K  ixys
 ixgh30n60c2d1 ixgt30n60c2d1.pdf pdf_icon

IXGT30N60C2

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11

 0.2. Size:159K  ixys
 ixgt30n60c2d1.pdf pdf_icon

IXGT30N60C2

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11

MOSTRAR MÁS

Otros transistores... IXGT28N120B, IXGT28N120BD1, IXGT28N60BD1, IXGT2N250, IXGT30N120B3D1, IXGT30N60B, IXGT30N60B2, IXGT30N60B2D1, IRG7R313U, IXGT30N60C2D1, IXGT30N60C3D1, IXGT32N100A3, IXGT32N120A3, IXGT32N170, IXGT32N170A, IXGT32N60C, IXGT32N90B2