IXGT30N60C2 Specs and Replacement
Type Designator: IXGT30N60C2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 190 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 110 pF
Package: TO268
IXGT30N60C2 Substitution - IGBTⓘ Cross-Reference Search
IXGT30N60C2 datasheet
ixgh30n60c2 ixgt30n60c2.pdf
VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =... See More ⇒
ixgt30n60c2.pdf
VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =... See More ⇒
ixgh30n60c2d1 ixgt30n60c2d1.pdf
VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11... See More ⇒
ixgt30n60c2d1.pdf
VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11... See More ⇒
Specs: IXGT28N120B, IXGT28N120BD1, IXGT28N60BD1, IXGT2N250, IXGT30N120B3D1, IXGT30N60B, IXGT30N60B2, IXGT30N60B2D1, IRG7R313U, IXGT30N60C2D1, IXGT30N60C3D1, IXGT32N100A3, IXGT32N120A3, IXGT32N170, IXGT32N170A, IXGT32N60C, IXGT32N90B2
Keywords - IXGT30N60C2 transistor spec
IXGT30N60C2 cross reference
IXGT30N60C2 equivalent finder
IXGT30N60C2 lookup
IXGT30N60C2 substitution
IXGT30N60C2 replacement
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