IXGT40N120B2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGT40N120B2D1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 380 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 55 nS
Coesⓘ - Capacitancia de salida, typ: 190 pF
Paquete / Cubierta: TO268
Búsqueda de reemplazo de IXGT40N120B2D1 IGBT
IXGT40N120B2D1 Datasheet (PDF)
ixgt40n120b2d1.pdf

High Voltage IGBTs VCES = 1200VIXGH40N120B2D1w/DiodeIXGT40N120B2D1IC110 = 40AVCE(sat) 3.5Vtfi(typ) = 140nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VGC (TAB)CVGEM Transient 30 VEIC25 TC = 25C (Limited by Lead) 75 AIC110 TC =
ixgt40n120a2.pdf

IXGH 40N120A2IXGT 40N120A2IXGH 40N120A2 VCES = 1200 VHigh Voltage IGBTIXGT 40N120A2 IC25 = 75 ALow VCE(sat)VCE(sat) 2.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VCES TJ = 25C to 150C 1200 VVCES TJ = 25C to 150C 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C, IGBT chip capabilit
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V
ixgh40n60b ixgt40n60b.pdf

IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C
Otros transistores... IXGT32N60C , IXGT32N90B2 , IXGT32N90B2D1 , IXGT35N120B , IXGT35N120C , IXGT39N60B , IXGT39N60BD1 , IXGT40N120A2 , GT30F133 , IXGT40N60B , IXGT40N60B2 , IXGT40N60B2D1 , IXGT40N60C , IXGT40N60C2 , IXGT40N60C2D1 , IXGT45N120 , IXGT4N250C .
History: IGW50N65F5A | MMG35CB120X6TC
History: IGW50N65F5A | MMG35CB120X6TC



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc3281 datasheet | 2sa1106 | 2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618