All IGBT. IXGT40N120B2D1 Datasheet

 

IXGT40N120B2D1 Datasheet and Replacement


   Type Designator: IXGT40N120B2D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 380 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 190 pF
   Qgⓘ - Total Gate Charge, typ: 138 nC
   Package: TO268
      - IGBT Cross-Reference

 

IXGT40N120B2D1 Datasheet (PDF)

 ..1. Size:213K  ixys
ixgt40n120b2d1.pdf pdf_icon

IXGT40N120B2D1

High Voltage IGBTs VCES = 1200VIXGH40N120B2D1w/DiodeIXGT40N120B2D1IC110 = 40AVCE(sat) 3.5Vtfi(typ) = 140nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VGC (TAB)CVGEM Transient 30 VEIC25 TC = 25C (Limited by Lead) 75 AIC110 TC =

 4.1. Size:168K  ixys
ixgt40n120a2.pdf pdf_icon

IXGT40N120B2D1

IXGH 40N120A2IXGT 40N120A2IXGH 40N120A2 VCES = 1200 VHigh Voltage IGBTIXGT 40N120A2 IC25 = 75 ALow VCE(sat)VCE(sat) 2.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VCES TJ = 25C to 150C 1200 VVCES TJ = 25C to 150C 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C, IGBT chip capabilit

 7.1. Size:162K  ixys
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf pdf_icon

IXGT40N120B2D1

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V

 7.2. Size:291K  ixys
ixgh40n60b ixgt40n60b.pdf pdf_icon

IXGT40N120B2D1

IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C

Datasheet: IXGT32N60C , IXGT32N90B2 , IXGT32N90B2D1 , IXGT35N120B , IXGT35N120C , IXGT39N60B , IXGT39N60BD1 , IXGT40N120A2 , SGH80N60UFD , IXGT40N60B , IXGT40N60B2 , IXGT40N60B2D1 , IXGT40N60C , IXGT40N60C2 , IXGT40N60C2D1 , IXGT45N120 , IXGT4N250C .

History: GT50J322 | 7MBP100VDA060-50 | BSM300GA170DLC | VS-GT105LA120UX | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - IXGT40N120B2D1 transistor datasheet

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 IXGT40N120B2D1 replacement

 

 
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