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G30N60C3D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G30N60C3D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 208

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 63

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 40

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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G30N60C3D Datasheet (PDF)

1.1. hgtg30n60c3d.pdf Size:268K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs • Short Circuit Rating and bipolar transistors

4.1. hgtg30n60a4d.pdf Size:173K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage • 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs • 600V Switching SOA Capability and bipolar transistors. This device has the high input impedan

4.2. hgtg30n60b3.pdf Size:204K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching • 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance of a • Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC

 4.3. hgtg30n60a4.pdf Size:161K _fairchild_semi

G30N60C3D
G30N60C3D

 HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching • >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar • 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a • 600V Switching SOA Capability MOSFET and the low on-state co

4.4. hgtg30n60b3d.pdf Size:212K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT Packaging with Anti-Parallel Hyperfast Diode JEDEC STYLE TO-247 E The HGTG30N60B3D is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar G transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor

 4.5. sihg30n60e.pdf Size:177K _vishay

G30N60C3D
G30N60C3D

SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.125 • Reduced switching and conduction losses Qg max. (nC) 130 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Available Qgd (

4.6. ngtg30n60flwg.pdf Size:173K _onsemi

G30N60C3D
G30N60C3D

NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System

4.7. ngtg30n60fwg.pdf Size:173K _onsemi

G30N60C3D
G30N60C3D

NGTG30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation 30 A, 600 V

Otros transistores... G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , IRG4PC40UD , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D .

 

 
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