All IGBT. G30N60C3D Datasheet

 

G30N60C3D IGBT. Datasheet pdf. Equivalent

Type Designator: G30N60C3D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 63A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 40

Package: TO247

G30N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

G30N60C3D Datasheet (PDF)

1.1. hgtg30n60c3d.pdf Size:268K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs • Short Circuit Rating and bipolar transistors. The dev

4.1. hgtg30n60b3d.pdf Size:212K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT Packaging with Anti-Parallel Hyperfast Diode JEDEC STYLE TO-247 E The HGTG30N60B3D is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar G transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. T

4.2. hgtg30n60a4.pdf Size:161K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching • >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar • 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a • 600V Switching SOA Capability MOSFET and the low on-state conduction

4.3. hgtg30n60a4d.pdf Size:173K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage • 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs • 600V Switching SOA Capability and bipolar transistors. This device has the high input impedance of a M

4.4. hgtg30n60b3.pdf Size:204K _fairchild_semi

G30N60C3D
G30N60C3D

HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching • 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance of a • Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC MOSFET

4.5. ngtg30n60flwg.pdf Size:173K _igbt

G30N60C3D
G30N60C3D

NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System

4.6. ngtg30n60fwg.pdf Size:173K _igbt

G30N60C3D
G30N60C3D

NGTG30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation 30 A, 600 V â

Datasheet: G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , IRG4PC40UD , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D .

 


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