All IGBT. SIG25N60W Datasheet


SIG25N60W IGBT. Datasheet pdf. Equivalent

Type Designator: SIG25N60W

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 170

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 50

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9

Maximum G-E Threshold Voltag |VGE(th)|, V: 6

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 36

Collector Capacity (Cc), typ, pF: 93

Total Gate Charge (Qg), typ, nC: 23

Package: TO247

SIG25N60W Transistor Equivalent Substitute - IGBT Cross-Reference Search


SIG25N60W Datasheet (PDF)

 ..1. Size:1218K  cn super semi
sig25n60f sig25n60p sig25n60w sig25n60b.pdf


SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG25N60*Rev. Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 25 Aprinciple. The SJ-IGBT series pr

 9.1. Size:277K  powersem


ECO-PACTM 2IGBT Module IC25 = 30 APSIG 25/12Short Circuit SOA CapabilityVCES = 1200 VPSI 25/12*Square RBSOAVCE(sat)typ.= 2.6 VPSIS 25/12*PSSI 25/12*Preliminary Data SheetLN 9 S18 A1 JK 10PSIGP 9PSIL 9E 2PSI 25/12* PSIS 25/12*PSIG 25/12 PSSI 25/12*G 10X 13*NTC optional K 10IGBTsN TCX 16X 15X 18Symbol Conditions Maximum RatingsX 15VCES TVJ

 9.2. Size:275K  powersem


ECO-PACTM 2IGBT Module IC25 = 24.5 APSIG 25/06VCES = 600 VPSI 25/06*Short Circuit SOA CapabilitySquare RBSOA VCE(sat)typ.= 2.4 VPSIS 25/06*PSSI 25/06*Preliminary Data SheetLN 9 S18 A1 JK 10PSIGP 9PSIL 9E 2PSI 25/06* PSIS 25/06*PSIG 25/06 PSSI 25/06*G 1 0X 1 3K 1 0*NTC optionalN T CIGBTsX 1 6X 1 5X 1 8Symbol Conditions Maximum Ratings X 15

Datasheet: DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , IRG4PC40UD , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 .


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