All IGBT. JJT30N65UE Datasheet

 

JJT30N65UE Datasheet and Replacement


   Type Designator: JJT30N65UE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T3065UE
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 39 nS
   Coesⓘ - Output Capacitance, typ: 95 pF
   Qg ⓘ - Total Gate Charge, typ: 78 nC
   Package: TO247
 

 JJT30N65UE substitution

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JJT30N65UE Datasheet (PDF)

 ..1. Size:2990K  jiejie micro
 jjt30n65ue.pdf pdf_icon

JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65UEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 6.1. Size:3359K  jiejie micro
 jjt30n65ss.pdf pdf_icon

JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65SSKey performance: V =650VCETO-220F I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 6.2. Size:3803K  jiejie micro
 jjt30n65se.pdf pdf_icon

JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65SEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GC Positive V temperature coefficient.CE (sat)E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 6.3. Size:3377K  jiejie micro
 jjt30n65sy.pdf pdf_icon

JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65SYKey performance:TO-220 V =650VCE I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

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Datasheet: JJT40N135UE , JJT40N65HE , JJT40N65LE , JJT40N65UE , JJT40N65UH , JJT30N65SE , JJT30N65SS , JJT30N65SY , SGH80N60UFD , JJT40N120HE , JJT40N120SE , , , , , , .

Keywords - JJT30N65UE transistor datasheet

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