JJT30N65UE - аналоги, параметры транзистора - Справочник транзисторов

JJT30N65UE даташит

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650V 30A Trench and Field Stop IGBT JJT30N65UE Key performance V =650V CE TO-247 I =30A@T =100 C C V =1.8V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machi

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650V 30A Trench and Field Stop IGBT JJT30N65SS Key performance V =650V CE TO-220F I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

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650V 30A Trench and Field Stop IGBT JJT30N65SE Key performance V =650V CE TO-247 I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C Positive V temperature coefficient. CE (sat) E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

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650V 30A Trench and Field Stop IGBT JJT30N65SY Key performance TO-220 V =650V CE I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

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