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JJT30N65UE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT30N65UE
   Tipo de transistor: IGBT + Diode
   Código de marcado: T3065UE
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 39 nS
   Coesⓘ - Capacitancia de salida, typ: 95 pF
   Qgⓘ - Carga total de la puerta, typ: 78 nC
   Paquete / Cubierta: TO247
 

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JJT30N65UE Datasheet (PDF)

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JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65UEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

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JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65SSKey performance: V =650VCETO-220F I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 6.2. Size:3803K  jiejie micro
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JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65SEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GC Positive V temperature coefficient.CE (sat)E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 6.3. Size:3377K  jiejie micro
jjt30n65sy.pdf pdf_icon

JJT30N65UE

650V 30A Trench and Field Stop IGBTJJT30N65SYKey performance:TO-220 V =650VCE I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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