DG50H12T2Z PDF and Equivalents Search

 

DG50H12T2Z Specs and Replacement

Type Designator: DG50H12T2Z

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 672 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 140 nS

Coesⓘ - Output Capacitance, typ: 270 pF

Package: TO247

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DG50H12T2Z datasheet

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DG50H12T2Z

DG50H12T2Z IGBT Discrete DOSEMI IGBT DG50H12T2Z 1200V/50A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low V Trench IGBT technology CE(sat) Low switching loss Maximum junction temperature 175... See More ⇒

Specs: SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y , NGTB75N65FL2 , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U .

Keywords - DG50H12T2Z transistor spec

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