All IGBT. DG50H12T2Z Datasheet

 

DG50H12T2Z Datasheet and Replacement


   Type Designator: DG50H12T2Z
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 672 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 140 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Package: TO247
      - IGBT Cross-Reference

 

DG50H12T2Z Datasheet (PDF)

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DG50H12T2Z

DG50H12T2Z IGBT Discrete DOSEMI IGBT DG50H12T2Z 1200V/50A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low V Trench IGBT technology CE(sat) Low switching loss Maximum junction temperature 175

Datasheet: SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y , MGD623S , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U .

History: DIM1200ESM33-F | IGC04R60DE

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