SIG20N60P IGBT. Datasheet pdf. Equivalent
Type Designator: SIG20N60P
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 93 pF
Qgⓘ - Total Gate Charge, typ: 23 nC
Package: TO220
SIG20N60P Transistor Equivalent Substitute - IGBT Cross-Reference Search
SIG20N60P Datasheet (PDF)
sig20n60f sig20n60p.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60*Rev. 0.3Aug.2021www.supersemi.com.cnSIG20N60F/SIG20N60P600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat
sig20n60p1a.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60P1ARev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60P1A600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)I
sig20n60f.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60FRev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60F600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)IC=20
ssig20n135h.pdf
SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co
Datasheet: DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , MGD623S , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2