SIG20N60P Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

SIG20N60P Datasheet (PDF)

..1. Size:1068K cn super semi
sig20n60f sig20n60p.pdf pdf_icon

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60*Rev. 0.3Aug.2021www.supersemi.com.cnSIG20N60F/SIG20N60P600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat

0.1. Size:1011K cn super semi
sig20n60p1a.pdf pdf_icon

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60P1ARev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60P1A600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)I

6.1. Size:971K cn super semi
sig20n60f.pdf pdf_icon

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60FRev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60F600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)IC=20

8.1. Size:614K silikron
ssig20n135h.pdf pdf_icon

SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co

Datasheet: DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , GT30F125 , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y .