SIG20N60P - аналоги, параметры транзистора - Справочник транзисторов

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..1. Size:1068K cn super semi
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SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG20N60* Rev. 0.3 Aug.2021 www.supersemi.com.cn SIG20N60F/SIG20N60P 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 20 A principle. The SJ-IGBT series provides low VCE(sat

0.1. Size:1011K cn super semi
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SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG20N60P1A Rev. 0.5 Apr. 2023 www.supersemi.com.cn SIG20N60P1A 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 20 A principle. The SJ-IGBT series provides low VCE(sat) I

6.1. Size:971K cn super semi
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SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG20N60F Rev. 0.5 Apr. 2023 www.supersemi.com.cn SIG20N60F 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 20 A principle. The SJ-IGBT series provides low VCE(sat) IC=20

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SSIG20N135H Main Product Characteristics VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100 C Schema t ic d iagr am TO-247 Features and Benefits Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co

Другие IGBT... DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , TGAN60N60F2DS , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y .