All IGBT. G20N120E2 Datasheet

 

G20N120E2 IGBT. Datasheet pdf. Equivalent

Type Designator: G20N120E2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.9V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 34A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 100

Package: TO247

G20N120E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

G20N120E2 Datasheet (PDF)

3.1. hgtg20n120.pdf Size:79K _harris_semi

G20N120E2
G20N120E2

S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR • Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of M

3.2. brg20n120d.pdf Size:161K _igbt_a

G20N120E2
G20N120E2

BRG20N120D 绝缘栅双极晶体管/INSULATED-GATE BIPOLAR TRANSISTOR 用途/Applications ◆ 逆变器/General purpose inverter ◆ 变频器/Frequency converters ◆ 电磁炉/Induction Heating(IH) ◆ 不间断电源/Uninterrupted Power Supply(UPS) 特点/Features ◆ 低栅极电荷/Low gate charge ◆ 正温度系数/Positive temperature coefficient ◆ 低饱和压降/Lo

3.3. brg20n120d.pdf Size:161K _blue-rocket-elect

G20N120E2
G20N120E2

BRG20N120D 绝缘栅双极晶体管/INSULATED-GATE BIPOLAR TRANSISTOR 用途/Applications ◆ 逆变器/General purpose inverter ◆ 变频器/Frequency converters ◆ 电磁炉/Induction Heating(IH) ◆ 不间断电源/Uninterrupted Power Supply(UPS) 特点/Features ◆ 低栅极电荷/Low gate charge ◆ 正温度系数/Positive temperature coefficient ◆ 低饱和压降/Lo

Datasheet: G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , STGB10NB37LZ , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 .

 


G20N120E2
  G20N120E2
  G20N120E2
  G20N120E2
 
G20N120E2
  G20N120E2
  G20N120E2
  G20N120E2
 

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