All IGBT. SIG20N60F Datasheet

 

SIG20N60F IGBT. Datasheet pdf. Equivalent

Type Designator: SIG20N60F

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 43

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 40

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7

Maximum G-E Threshold Voltag |VGE(th)|, V: 6

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 36

Collector Capacity (Cc), typ, pF: 93

Total Gate Charge (Qg), typ, nC: 23

Package: TO220F

SIG20N60F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SIG20N60F Datasheet (PDF)

 ..1. Size:1068K  cn super semi
 sig20n60f sig20n60p.pdf

SIG20N60F SIG20N60F

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60*Rev. 0.3Aug.2021www.supersemi.com.cnSIG20N60F/SIG20N60P600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat

 8.1. Size:614K  silikron
 ssig20n135h.pdf

SIG20N60F SIG20N60F

SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co

Datasheet: DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , RJH60F7DPQ-A0 , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 .

 

 
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