SIG20N60F Datasheet. Specs and Replacement

Type Designator: SIG20N60F  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 43 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 93 pF

Package: TO220F

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SIG20N60F datasheet

 ..1. Size:971K  cn super semi
 sig20n60f.pdf pdf_icon

SIG20N60F

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG20N60F Rev. 0.5 Apr. 2023 www.supersemi.com.cn SIG20N60F 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 20 A principle. The SJ-IGBT series provides low VCE(sat) IC=20... See More ⇒

 ..2. Size:1068K  cn super semi
 sig20n60f sig20n60p.pdf pdf_icon

SIG20N60F

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG20N60* Rev. 0.3 Aug.2021 www.supersemi.com.cn SIG20N60F/SIG20N60P 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 20 A principle. The SJ-IGBT series provides low VCE(sat... See More ⇒

 6.1. Size:1011K  cn super semi
 sig20n60p1a.pdf pdf_icon

SIG20N60F

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG20N60P1A Rev. 0.5 Apr. 2023 www.supersemi.com.cn SIG20N60P1A 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 20 A principle. The SJ-IGBT series provides low VCE(sat) I... See More ⇒

 8.1. Size:614K  silikron
 ssig20n135h.pdf pdf_icon

SIG20N60F

SSIG20N135H Main Product Characteristics VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100 C Schema t ic d iagr am TO-247 Features and Benefits Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co... See More ⇒

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Specs: DG10X06T1, DG10X12T2, DG120X07T2, DG15X06T1, DG15X12T2, DG20X06T2, DG30X07T2, HGTG12N60D1D, YGW40N65F1A1, SIG20N60P, SIG25N60F, SIG25N60P, SIG25N60W, SIG25N60B, SIG30N60P, SIG30N60W, DG40F12T2

Keywords - SIG20N60F transistor spec

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