G20N120E2 Todos los transistores

 

G20N120E2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G20N120E2

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.9

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 34

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 100

Empaquetado / Estuche: TO247

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G20N120E2 Datasheet (PDF)

7.1. hgtg20n120.pdf Size:79K _harris_semi

G20N120E2
G20N120E2

S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best

7.2. brg20n120d.pdf Size:161K _blue-rocket-elect

G20N120E2
G20N120E2

BRG20N120D /INSULATED-GATE BIPOLAR TRANSISTOR /Applications /General purpose inverter /Frequency converters /Induction Heating(IH) /Uninterrupted Power Supply(UPS) /Features /Low gate charge /Positive temperature coefficient /Lo

 7.3. brg20n120d.pdf Size:161K _foshan

G20N120E2
G20N120E2

BRG20N120D /INSULATED-GATE BIPOLAR TRANSISTOR /Applications /General purpose inverter /Frequency converters /Induction Heating(IH) /Uninterrupted Power Supply(UPS) /Features /Low gate charge /Positive temperature coefficient /Lo

Otros transistores... G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , STGB10NB37LZ , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 .

 

 
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