All IGBT. DG40F12T2 Datasheet

 

DG40F12T2 IGBT. Datasheet pdf. Equivalent


   Type Designator: DG40F12T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 707 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 35 nS
   Qgⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247

 DG40F12T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DG40F12T2 Datasheet (PDF)

 ..1. Size:161K  cn starpower
 dg40f12t2.pdf

DG40F12T2 DG40F12T2

DG40F12T2 IGBT Discrete DOSEMI IGBT DG40F12T2 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as electronic welder. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC VCE(

Datasheet: SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , GT30J127 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH .

 

 
Back to Top