All IGBT. DG40F12T2 Datasheet

 

DG40F12T2 Datasheet and Replacement


   Type Designator: DG40F12T2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 707 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 35 nS
   Package: TO247
      - IGBT Cross-Reference

 

DG40F12T2 Datasheet (PDF)

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DG40F12T2

DG40F12T2 IGBT Discrete DOSEMI IGBT DG40F12T2 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as electronic welder. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC VCE(

Datasheet: SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , STGW60V60DF , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH .

History: NGTB15N120IHL | IXDH35N60BD1 | IXGT32N60BD1 | IXGK50N60A2D1

Keywords - DG40F12T2 transistor datasheet

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