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G40N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G40N60B3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 290

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 70

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 47

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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G40N60B3 Datasheet (PDF)

1.1. hgtg40n60b3.pdf Size:138K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching • 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. The device has the high input impedance of a • Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

1.2. hgtg40n60b3.pdf Size:65K _harris_semi

G40N60B3
G40N60B3

S E M I C O N D U C T O R HGTG40N60B3 PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 • 70A, 600V at TC = +25oC E • Square Switching SOA Capability C G • Typical Fall Time - 160ns at +150oC • Short Circuit Rating • Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the bes

 4.1. hgtg40n60a4.pdf Size:160K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching • 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a • 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance • 600V Switching SOA Capability of a MOSFET and the low on

4.2. ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf Size:162K _ixys

G40N60B3
G40N60B3

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode ≤ ≤ IXGJ40N60C2D1 VCE(SAT) ≤ 2.7V ≤ ≤ tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C (TAB) C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V TO-268 (D3) ( IXGT) VGEM Transient ±30 V

Otros transistores... G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , SGH80N60UFD , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G .

 

 
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