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G40N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G40N60B3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 290

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 70

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 47

Empaquetado / Estuche: TO247

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G40N60B3 Datasheet (PDF)

0.1. hgtg40n60b3.pdf Size:138K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60B3Data Sheet November 2004 File Number70A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

0.2. hgtg40n60b3.pdf Size:65K _harris_semi

G40N60B3
G40N60B3

S E M I C O N D U C T O R HGTG40N60B3PRELIMINARY70A, 600V, UFS Series N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 70A, 600V at TC = +25oCE Square Switching SOA CapabilityCG Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction LossDescriptionThe HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the bes

 8.1. hgtg40n60a4.pdf Size:160K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60A4Data Sheet August 2003 File Number600V, SMPS Series N-Channel IGBT FeaturesThe HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40Adevice combining the best features of a MOSFET and a 200kHz Operation At 390V, 20Abipolar transistor. This device has the high input impedance 600V Switching SOA Capabilityof a MOSFET and the low on

8.2. ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf Size:162K _ixys

G40N60B3
G40N60B3

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V

Otros transistores... G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , SGH80N60UFD , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G .

 

 
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