All IGBT. JJT40N135UE Datasheet

 

JJT40N135UE Datasheet and Replacement


   Type Designator: JJT40N135UE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T40135UE
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6(typ) V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 98 pF
   Qg ⓘ - Total Gate Charge, typ: 189 nC
   Package: TO247
 

 JJT40N135UE substitution

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JJT40N135UE Datasheet (PDF)

 ..1. Size:1403K  jiejie micro
 jjt40n135ue.pdf pdf_icon

JJT40N135UE

1350V 40A Trench and Field Stop IGBTJJT40N135UEKey performance: V =1350VCETO-247 I =40A@T =100C C V =2.0VCE(sat)Features: Trench and field-stop technology High speed switchingGC Positive VCE (sat) temperature coefficient.E Fast switching and short tail current. High ruggedness performanceApplications: Induction cooking R

 7.1. Size:4325K  jiejie micro
 jjt40n120he.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBTJJT40N120HEKey performance: V =1200VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology High speed switchingGC Low collector to emitter saturation voltageE Easy parallel switching capability High ruggedness performance RoHS compliantApplications: Welding

 7.2. Size:4286K  jiejie micro
 jjt40n120ue.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBTJJT40N120UEKey performance: V =1200VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology High speed switchingGC Low collector to emitter saturation voltageE Easy parallel switching capability High ruggedness performance RoHS compliantApplications: Welding

 7.3. Size:4287K  jiejie micro
 jjt40n120se.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBTJJT40N120SEKey performance: V =1200VCETO-247 I =40A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology High speed switchingGC Low collector to emitter saturation voltageE Easy parallel switching capability Short circuit withstands time 10s High ruggedness performance Ro

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Keywords - JJT40N135UE transistor datasheet

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