JJT40N135UE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT40N135UE  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 416 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

Coesⓘ - Capacitancia de salida, typ: 98 pF

Encapsulados: TO247

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JJT40N135UE datasheet

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JJT40N135UE

1350V 40A Trench and Field Stop IGBT JJT40N135UE Key performance V =1350V CE TO-247 I =40A@T =100 C C V =2.0V CE(sat) Features Trench and field-stop technology High speed switching G C Positive VCE (sat) temperature coefficient. E Fast switching and short tail current. High ruggedness performance Applications Induction cooking R

 7.1. Size:4325K  jiejie micro
 jjt40n120he.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBT JJT40N120HE Key performance V =1200V CE TO-247 I =40A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability High ruggedness performance RoHS compliant Applications Welding

 7.2. Size:4286K  jiejie micro
 jjt40n120ue.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBT JJT40N120UE Key performance V =1200V CE TO-247 I =40A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability High ruggedness performance RoHS compliant Applications Welding

 7.3. Size:4287K  jiejie micro
 jjt40n120se.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBT JJT40N120SE Key performance V =1200V CE TO-247 I =40A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability Short circuit withstands time 10 s High ruggedness performance Ro

MOSTRAR MÁS

Otros transistores... JJT20N65SS, JJT20N65SY, JJT25N120SE, JJT25N135UE, JJT60N65HE, JJT60N65UE, JJT60N65UH, JJT40N120UE, RJH3047, JJT40N65HE, JJT40N65LE, JJT40N65UE, JJT40N65UH, JJT30N65SE, JJT30N65SS, JJT30N65SY, JJT30N65UE