JJT40N135UE Todos los transistores

 

JJT40N135UE IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT40N135UE
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 416 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 98 pF
   Paquete / Cubierta: TO247
 

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JJT40N135UE datasheet

 ..1. Size:1403K  jiejie micro
 jjt40n135ue.pdf pdf_icon

JJT40N135UE

1350V 40A Trench and Field Stop IGBT JJT40N135UE Key performance V =1350V CE TO-247 I =40A@T =100 C C V =2.0V CE(sat) Features Trench and field-stop technology High speed switching G C Positive VCE (sat) temperature coefficient. E Fast switching and short tail current. High ruggedness performance Applications Induction cooking R

 7.1. Size:4325K  jiejie micro
 jjt40n120he.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBT JJT40N120HE Key performance V =1200V CE TO-247 I =40A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability High ruggedness performance RoHS compliant Applications Welding

 7.2. Size:4286K  jiejie micro
 jjt40n120ue.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBT JJT40N120UE Key performance V =1200V CE TO-247 I =40A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability High ruggedness performance RoHS compliant Applications Welding

 7.3. Size:4287K  jiejie micro
 jjt40n120se.pdf pdf_icon

JJT40N135UE

1200V 40A Trench and Field Stop IGBT JJT40N120SE Key performance V =1200V CE TO-247 I =40A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability Short circuit withstands time 10 s High ruggedness performance Ro

MOSTRAR MÁS

Otros transistores... JJT20N65SS , JJT20N65SY , JJT25N120SE , JJT25N135UE , JJT60N65HE , JJT60N65UE , JJT60N65UH , JJT40N120UE , IHW20N135R5 , JJT40N65HE , JJT40N65LE , JJT40N65UE , JJT40N65UH , JJT30N65SE , JJT30N65SS , JJT30N65SY , JJT30N65UE .

 

 

 


 
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