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DG30X07T2 Spec and Replacement


   Type Designator: DG30X07T2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Package: TO247

 DG30X07T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DG30X07T2 specs

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DG30X07T2

DG30X07T2 IGBT Discrete DOSEMI IGBT DG30X07T2 650V/30A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Fast IGBT technology 6 s short circuit capability Low switching loss Ma... See More ⇒

Specs: VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , CRG75T60AK3HD , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P .

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