All IGBT. G12N60C3D Datasheet

 

G12N60C3D IGBT. Datasheet pdf. Equivalent

Type Designator: G12N60C3D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 104

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 24

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 14

Package: TO247

G12N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

G12N60C3D Datasheet (PDF)

0.1. hgtg12n60c3d.pdf Size:120K _fairchild_semi

G12N60C3D
G12N60C3D

HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has t

0.2. hgtg12n60c3d .pdf Size:102K _harris_semi

G12N60C3D
G12N60C3D

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1997Features Package 24A, 600V at TC = 25oCJEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MO

 0.3. hgtg12n60c3d.pdf Size:106K _harris_semi

G12N60C3D
G12N60C3D

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage swit

Datasheet: G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , 20N60C3DR , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C .

 

 
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