All IGBT. SIG30N60W Datasheet

 

SIG30N60W IGBT. Datasheet pdf. Equivalent


   Type Designator: SIG30N60W
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 93 pF
   Qgⓘ - Total Gate Charge, typ: 23 nC
   Package: TO247

 SIG30N60W Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SIG30N60W Datasheet (PDF)

 ..1. Size:1146K  cn super semi
 sig30n60p sig30n60w.pdf

SIG30N60W SIG30N60W

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG30N60*Rev. 0.2Jul.2021www.supersemi.com.cnSIG30N60P/SIG30N60W600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 30 Aprinciple. The SJ-IGBT series provides low VCE(sat

Datasheet: HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , XNF15N60T , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS .

 

 
Back to Top