SIG30N60W Specs and Replacement
Type Designator: SIG30N60W
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 93 pF
Package: TO247
SIG30N60W Substitution
SIG30N60W datasheet
sig30n60p sig30n60w.pdf
SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG30N60* Rev. 0.2 Jul.2021 www.supersemi.com.cn SIG30N60P/SIG30N60W 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 30 A principle. The SJ-IGBT series provides low VCE(sat... See More ⇒
Specs: HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , IRG4PC50UD , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS .
Keywords - SIG30N60W transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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