G3N60C3D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G3N60C3D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 33

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 6

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 5

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de G3N60C3D - IGBT

G3N60C3D Datasheet (PDF)

9.1. dmg3n60sct.pdf Size:490K _1

DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C TO220AB Low Input/Output Leakage 600V 3.5@VGS = 10V 3.3A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanica

9.2. dmg3n60sj3.pdf Size:437K _diodes

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV I DSS DR Max DS(ON)(@ T Max) @T = +25C High BV Rating for Power Application J C DSS Low Input Capacitance 650V 2.8A 3.5 @ V = 10V GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 9.3. dmg3n60sj3.pdf Size:274K _inchange_semiconductor

isc N-Channel MOSFET Transistor DMG3N60SJ3FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.4. dmg3n60sct.pdf Size:251K _inchange_semiconductor

isc N-Channel MOSFET Transistor DMG3N60SCTFEATURESStatic drain-source on-resistance:RDS(on) 3.5Fully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterMotor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Otros transistores... G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , IHW15N120R3 , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D .