DG50X07T2 PDF and Equivalents Search

 

DG50X07T2 Specs and Replacement

Type Designator: DG50X07T2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 714 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Package: TO247

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DG50X07T2 datasheet

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DG50X07T2

DG50X07T2 IGBT Discrete DOSEMI IGBT DG50X07T2 650V/50A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC ... See More ⇒

Specs: SIG25N60P, SIG25N60W, SIG25N60B, SIG30N60P, SIG30N60W, DG40F12T2, DG40H12T2Y, DG50H12T2Z, FGH30S130P, DG75H12T2, DG75X07T2L, DG75X12T2, MSG100D350FHS, MSG100N350FH, GA100TS120U, GA100TS60U, GA125TS120U

Keywords - DG50X07T2 transistor spec

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