All IGBT. G30N60C3 Datasheet

 

G30N60C3 IGBT. Datasheet pdf. Equivalent

Type Designator: G30N60C3

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 63

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 40

Package: TO247

G30N60C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

G30N60C3 Datasheet (PDF)

0.1. hgtg30n60c3d.pdf Size:268K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60C3DData Sheet January 2009 File Number 4041.263A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oCThe HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oCswitching device combining the best features of MOSFETs Short Circuit Ratingand bipolar transistors

8.1. hgtg30n60a4d.pdf Size:173K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedan

8.2. hgtg30n60b3.pdf Size:204K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60B3Data Sheet November 200460A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC

 8.3. hgtg30n60a4.pdf Size:161K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30Adevice combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18Atransistors. This device has the high input impedance of a 600V Switching SOA CapabilityMOSFET and the low on-state co

8.4. hgtg30n60b3d.pdf Size:212K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60B3DData Sheet April 200460A, 600V, UFS Series N-Channel IGBT Packagingwith Anti-Parallel Hyperfast DiodeJEDEC STYLE TO-247EThe HGTG30N60B3D is a MOS gated high voltage switching Cdevice combining the best features of MOSFETs and bipolar Gtransistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor

 8.5. sihg30n60e.pdf Size:177K _vishay

G30N60C3
G30N60C3

SiHG30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced switching and conduction lossesQg max. (nC) 130 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) AvailableQgd (

8.6. ngtg30n60flwg.pdf Size:173K _onsemi

G30N60C3
G30N60C3

NGTG30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

8.7. ngtg30n60fwg.pdf Size:173K _onsemi

G30N60C3
G30N60C3

NGTG30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation30 A, 600 V

Datasheet: G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , SGW30N60HS , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E .

 

 
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