Справочник IGBT. G30N60C3

 

G30N60C3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: G30N60C3

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 208W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.8V

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20V

Максимальный постоянный ток коллектора (Ic): 63A

Максимальная температура перехода (Tj): 150

Время нарастания: 40

Корпус: TO247

Аналог (замена) для G30N60C3

 

 

G30N60C3 Datasheet (PDF)

1.1. hgtg30n60c3d.pdf Size:268K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs Short Circuit Rating and bipolar transistors. The dev

4.1. hgtg30n60b3d.pdf Size:212K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT Packaging with Anti-Parallel Hyperfast Diode JEDEC STYLE TO-247 E The HGTG30N60B3D is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar G transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. T

4.2. hgtg30n60a4.pdf Size:161K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a 600V Switching SOA Capability MOSFET and the low on-state conduction

 4.3. hgtg30n60a4d.pdf Size:173K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs 600V Switching SOA Capability and bipolar transistors. This device has the high input impedance of a M

4.4. hgtg30n60b3.pdf Size:204K _fairchild_semi

G30N60C3
G30N60C3

HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC MOSFET

 4.5. ngtg30n60flwg.pdf Size:173K _igbt

G30N60C3
G30N60C3

NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System

4.6. ngtg30n60fwg.pdf Size:173K _igbt

G30N60C3
G30N60C3

NGTG30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation 30 A, 600 V

Другие IGBT... G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , SGW30N60HS , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E .

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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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