DG75H12T2 PDF and Equivalents Search

 

DG75H12T2 PDF Specs and Replacement


   Type Designator: DG75H12T2
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 937 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Package: TO247
 

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DG75H12T2 PDF specs

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DG75H12T2

DG75H12T2 IGBT Discrete DOSEMI IGBT DG75H12T2 1200V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC ... See More ⇒

Specs: SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , GT30G122 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U .

Keywords - DG75H12T2 transistor spec

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