DG75H12T2 Datasheet and Replacement
Type Designator: DG75H12T2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 937 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Package: TO247
DG75H12T2 substitution
DG75H12T2 Datasheet (PDF)
dg75h12t2.pdf
DG75H12T2 IGBT Discrete DOSEMI IGBT DG75H12T2 1200V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC
Datasheet: SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , TGD30N40P , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U .
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