All IGBT. JJT40N65UH Datasheet

 

JJT40N65UH Datasheet and Replacement


   Type Designator: JJT40N65UH
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T4065UH
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 95 pF
   Qg ⓘ - Total Gate Charge, typ: 78 nC
   Package: TO3P
 

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JJT40N65UH Datasheet (PDF)

 ..1. Size:3082K  jiejie micro
 jjt40n65uh.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65UHKey performance:TO-3P V =650VCE I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 5.1. Size:3206K  jiejie micro
 jjt40n65ue.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65UEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 6.1. Size:3304K  jiejie micro
 jjt40n65he.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65HEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

 6.2. Size:3100K  jiejie micro
 jjt40n65le.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65LEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.4VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: EV chargersPackage parametersTy

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Keywords - JJT40N65UH transistor datasheet

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