JJT40N65UH Todos los transistores

 

JJT40N65UH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT40N65UH
   Tipo de transistor: IGBT + Diode
   Código de marcado: T4065UH
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 55 nS
   Coesⓘ - Capacitancia de salida, typ: 95 pF
   Qgⓘ - Carga total de la puerta, typ: 78 nC
   Paquete / Cubierta: TO3P
 

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JJT40N65UH Datasheet (PDF)

 ..1. Size:3082K  jiejie micro
 jjt40n65uh.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65UHKey performance:TO-3P V =650VCE I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 5.1. Size:3206K  jiejie micro
 jjt40n65ue.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65UEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 6.1. Size:3304K  jiejie micro
 jjt40n65he.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65HEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

 6.2. Size:3100K  jiejie micro
 jjt40n65le.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBTJJT40N65LEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.4VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: EV chargersPackage parametersTy

MOSTRAR MÁS

Otros transistores... JJT60N65HE , JJT60N65UE , JJT60N65UH , JJT40N120UE , JJT40N135UE , JJT40N65HE , JJT40N65LE , JJT40N65UE , GT30F131 , JJT30N65SE , JJT30N65SS , JJT30N65SY , JJT30N65UE , JJT40N120HE , JJT40N120SE , , .

 

 
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