JJT40N65UH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT40N65UH  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 55 nS

Coesⓘ - Capacitancia de salida, typ: 95 pF

Encapsulados: TO3P

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JJT40N65UH datasheet

 ..1. Size:3082K  jiejie micro
 jjt40n65uh.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBT JJT40N65UH Key performance TO-3P V =650V CE I =40A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. G C Easy parallel switching capability. E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machin

 5.1. Size:3206K  jiejie micro
 jjt40n65ue.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBT JJT40N65UE Key performance V =650V CE TO-247 I =40A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machi

 6.1. Size:3304K  jiejie micro
 jjt40n65he.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBT JJT40N65HE Key performance V =650V CE TO-247 I =40A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Uninterruptib

 6.2. Size:3100K  jiejie micro
 jjt40n65le.pdf pdf_icon

JJT40N65UH

650V 40A Trench and Field Stop IGBT JJT40N65LE Key performance V =650V CE TO-247 I =40A@T =100 C C V =1.4V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications EV chargers Package parameters Ty

MOSTRAR MÁS

Otros transistores... JJT60N65HE, JJT60N65UE, JJT60N65UH, JJT40N120UE, JJT40N135UE, JJT40N65HE, JJT40N65LE, JJT40N65UE, GT30G124