All IGBT. DG20X06T2 Datasheet

 

DG20X06T2 Datasheet and Replacement


   Type Designator: DG20X06T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 166 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 42 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 10 nS
   Qgⓘ - Total Gate Charge, typ: 140 nC
   Package: TO247
      - IGBT Cross-Reference

 

DG20X06T2 Datasheet (PDF)

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DG20X06T2

DG20X06T2 IGBT Discrete DOSEMI IGBT DG20X06T2 600V/20A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC

Datasheet: VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , TGD30N40P , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B .

History: HMG40N60A | FGH30S150P | HGT1S2N120CNDS | IXSH30N60B2D1 | IXGP12N120A3

Keywords - DG20X06T2 transistor datasheet

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