All IGBT. FGH75T65UPD Datasheet

 

FGH75T65UPD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH75T65UPD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 205 pF
   Package: TO247

 FGH75T65UPD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH75T65UPD Datasheet (PDF)

 ..1. Size:910K  fairchild semi
fgh75t65upd.pdf

FGH75T65UPD
FGH75T65UPD

August 2012FGH75T65UPD650V, 75A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchildsnew series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operatingmance for Solar Inverter , UPS and Digital Power Generator High

 ..2. Size:599K  onsemi
fgh75t65upd fgh75t65upd-f155.pdf

FGH75T65UPD
FGH75T65UPD

IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD,FGH75T65UPD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offeroptimum performance for solar inverter, UPS, welder, and digitalCpower genera-tor where low conduction and switching losses areessential.FeaturesG Maximum Junctio

 0.1. Size:386K  onsemi
fgh75t65upd-f085.pdf

FGH75T65UPD
FGH75T65UPD

IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD-F085DescriptionUsing Novel Field Stop Trench IGBT Technology,ON Semiconductors new series of Field Stop Trench IGBTs offerwww.onsemi.comthe optimum performance for Automotive chargers, Solar Inverter,UPS and Digital Power Generator where low conduction andswitching losses are essential.CFeatures Maximum Junction Tempe

 6.1. Size:522K  onsemi
fgh75t65sqd.pdf

FGH75T65UPD
FGH75T65UPD

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, Welder, Telecom, ESS and PFCapplications where low conduction and switching losses are essential.CFeatures Maximum Junction Temperature : TJ

 6.2. Size:698K  onsemi
fgh75t65sqdtl4.pdf

FGH75T65UPD
FGH75T65UPD

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc

 6.3. Size:1229K  onsemi
fgh75t65sqdt.pdf

FGH75T65UPD
FGH75T65UPD

FGH75T65SQDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON semiconductors new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Curr

 6.4. Size:570K  onsemi
fgh75t65shdtl4.pdf

FGH75T65UPD
FGH75T65UPD

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SHDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc

 6.5. Size:453K  onsemi
fgh75t65shdtln4.pdf

FGH75T65UPD
FGH75T65UPD

IGBT - Field Stop, Trench650 V, 75 AProduct PreviewFGH75T65SHDTLN4Using the novel field stop 3rd generation IGBT technology,FGH75T65SHDTLN4 offers the optimum performance for solarwww.onsemi.cominverter, UPS, welder, telecom, ESS and PFC applications where lowconduction loss and switching loss are essential.Features75 A, 650 V Maximum Junction Temperature: TJ = 175C

 6.6. Size:1426K  onsemi
fgh75t65shd.pdf

FGH75T65UPD
FGH75T65UPD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.7. Size:1176K  onsemi
fgh75t65shdt.pdf

FGH75T65UPD
FGH75T65UPD

FGH75T65SHDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Cur

Datasheet: MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , IHW15N120R3 , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 , FGB40N60SM , IHW20N120R2 .

 

 
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