All IGBT. FGH75T65UPD Datasheet

 

FGH75T65UPD IGBT. Datasheet pdf. Equivalent

Type Designator: FGH75T65UPD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 375

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 150

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 43

Maximum Collector Capacity (Cc), pF: 205

Package: TO247

FGH75T65UPD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH75T65UPD Datasheet (PDF)

1.1. fgh75t65upd.pdf Size:910K _update_igbt

FGH75T65UPD
FGH75T65UPD

August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum perfor- • Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator • High

5.1. fgh75n60uf.pdf Size:258K _fairchild_semi

FGH75T65UPD
FGH75T65UPD

April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low High Input Impedance conduction and switching losses

Datasheet: MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , GT30J301 , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , , , , , .

 

 
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