FGH75T65UPD Todos los transistores

 

FGH75T65UPD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH75T65UPD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 375

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 1.65

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 150

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 43

Capacitancia de salida (Cc), pF: 205

Empaquetado / Estuche: TO247

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FGH75T65UPD Datasheet (PDF)

1.1. fgh75t65upd.pdf Size:910K _update_igbt

FGH75T65UPD
FGH75T65UPD

August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum perfor- • Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator • High

5.1. fgh75n60uf.pdf Size:258K _fairchild_semi

FGH75T65UPD
FGH75T65UPD

April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low High Input Impedance conduction and switching losses

Otros transistores... MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , GT30J301 , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , , , , , .

 

 
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Recientemente añadidas las descripciónes de los transistores

IGBT: STGP7NC60KD | STGF7NC60KD | STGB7NC60KD | FGH75T65UPD | STGW38IH120D | MBQ50T65FDSC | SL40N60FL | PDMB100E6 | SSG60N60N | JNG25N120HS |

 

 

 
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