FGH75T65UPD Todos los transistores

August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild s new series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator High

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital C power genera-tor where low conduction and switching losses are essential. Features G Maximum Junctio

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD-F085 Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductor s new series of Field Stop Trench IGBTs offer www.onsemi.com the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. C Features Maximum Junction Tempe

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc

FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Curr

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc

IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 offers the optimum performance for solar www.onsemi.com inverter, UPS, welder, telecom, ESS and PFC applications where low conduction loss and switching loss are essential. Features 75 A, 650 V Maximum Junction Temperature TJ = 175 C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FGH75T65SHDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Cur