DG40H12T2Y Spec and Replacement, IGBT Equivalent Finder, Cross Reference

DG40H12T2Y Specs and Replacement

   Type Designator: DG40H12T2Y
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   tr ⓘ - Rise Time, typ: 129 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Package: TO247

DG40H12T2Y Substitution

- IGBT ⓘ Cross-Reference Search

DG40H12T2Y datasheet

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DG40H12T2Y IGBT Discrete DOSEMI IGBT DG40H12T2Y 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175o... See More ⇒

Specs: SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , AOK40B65H2AL , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U .