All IGBT. DG40H12T2Y Datasheet

 

DG40H12T2Y Datasheet and Replacement


   Type Designator: DG40H12T2Y
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 129 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qg ⓘ - Total Gate Charge, typ: 350 nC
   Package: TO247
 

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DG40H12T2Y Datasheet (PDF)

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DG40H12T2Y

DG40H12T2Y IGBT Discrete DOSEMI IGBT DG40H12T2Y 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175o

Datasheet: SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , IRG4PC50UD , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U .

History: HGT1S3N60C3DS

Keywords - DG40H12T2Y transistor datasheet

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