DG40H12T2Y Spec and Replacement
Type Designator: DG40H12T2Y
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 129 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: TO247
DG40H12T2Y Transistor Equivalent Substitute - IGBT Cross-Reference Search
DG40H12T2Y specs
dg40h12t2y.pdf
DG40H12T2Y IGBT Discrete DOSEMI IGBT DG40H12T2Y 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175o... See More ⇒
Specs: SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , AOK40B65H2AL , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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