SIG30N60P Datasheet and Replacement
Type Designator: SIG30N60P
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 93 pF
Qg ⓘ - Total Gate Charge, typ: 23 nC
Package: TO220
SIG30N60P substitution
SIG30N60P Datasheet (PDF)
sig30n60p sig30n60w.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG30N60*Rev. 0.2Jul.2021www.supersemi.com.cnSIG30N60P/SIG30N60W600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 30 Aprinciple. The SJ-IGBT series provides low VCE(sat
Datasheet: DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , FGL60N100BNTD , SIG30N60W , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 .
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