SIG30N60P Datasheet. Specs and Replacement

Type Designator: SIG30N60P  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 170 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 93 pF

Package: TO220

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SIG30N60P datasheet

 ..1. Size:1146K  cn super semi
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SIG30N60P

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG30N60* Rev. 0.2 Jul.2021 www.supersemi.com.cn SIG30N60P/SIG30N60W 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 30 A principle. The SJ-IGBT series provides low VCE(sat... See More ⇒

Specs: DG30X07T2, HGTG12N60D1D, SIG20N60F, SIG20N60P, SIG25N60F, SIG25N60P, SIG25N60W, SIG25N60B, XNF15N60T, SIG30N60W, DG40F12T2, DG40H12T2Y, DG50H12T2Z, DG50X07T2, DG75H12T2, DG75X07T2L, DG75X12T2

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