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SIG30N60P Spec and Replacement


   Type Designator: SIG30N60P
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 93 pF
   Package: TO220

 SIG30N60P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SIG30N60P specs

 ..1. Size:1146K  cn super semi
 sig30n60p sig30n60w.pdf pdf_icon

SIG30N60P

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SIG30N60* Rev. 0.2 Jul.2021 www.supersemi.com.cn SIG30N60P/SIG30N60W 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the superjunction (SJ) IC 30 A principle. The SJ-IGBT series provides low VCE(sat... See More ⇒

Specs: DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W , SIG25N60B , MGD623S , SIG30N60W , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 .

History: DG15X12T2

Keywords - SIG30N60P transistor spec

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