All IGBT. G34N100E2 Datasheet


G34N100E2 IGBT. Datasheet pdf. Equivalent

Type Designator: G34N100E2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 55

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 100

Package: TO247

G34N100E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search


G34N100E2 Datasheet (PDF)

9.1. hgtg34n1.pdf Size:51K _harris_semi


S E M I C O N D U C T O R HGTG34N100E234A, 1000V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1000VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time - 710nsCOLLECTOR GATE(BOTTOM SIDE High Input ImpedanceMETAL) Low Conduction LossDescriptionThe HGTG34N100E2 is a MOS gated high voltage switchingdevice combining the best fea

Datasheet: G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , IGW30N60T , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C .


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