G20N60B3D IGBT. Datasheet pdf. Equivalent
Type Designator: G20N60B3D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 165
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 2
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 40
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 25
Package: TO247
G20N60B3D Transistor Equivalent Substitute - IGBT Cross-Reference Search
G20N60B3D Datasheet (PDF)
0.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs • Short Circuit Rated and bipolar transistors. The device has
6.1. hgtg20n60b3.pdf Size:194K _fairchild_semi
HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC h
8.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . .
8.2. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi
HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • >100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the • 600V Switching SOA Capability high input impedance of a
8.3. hgtg20n60a4d.pdf Size:148K _fairchild_semi
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching • 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance o
8.4. hgtg20n60c3r.pdf Size:112K _harris_semi
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These
Datasheet: G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .



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