G20N60B3D IGBT. Datasheet pdf. Equivalent
Type Designator: G20N60B3D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 165W
Maximum Collector-Emitter Voltage |Vce|, V: 600V
Collector-Emitter saturation Voltage |Vcesat|, V: 2V
Maximum Gate-Emitter Voltage |Veg|, V: 20V
Maximum Collector Current |Ic|, A: 40A
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 25
Package: TO247
G20N60B3D Transistor Equivalent Substitute - IGBT Cross-Reference Search
G20N60B3D Datasheet (PDF)
1.1. hgtg20n60b3d.pdf 
Size:176K _fairchild_semi
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has the high
2.1. hgtg20n60b3.pdf Size:236K _fairchild_semi
HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oC voltage switching devices combining the best features of 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input
2.2. hgtg20n60b3.pdf Size:194K _igbt_a
HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC h
Datasheet: G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .
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