Справочник IGBT. G20N60B3D

 

G20N60B3D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: G20N60B3D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 165

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 40

Максимальная температура перехода (Tj): 150

Время нарастания: 25

Тип корпуса: TO247

Аналог (замена) для G20N60B3D

 

 

G20N60B3D Datasheet (PDF)

0.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3DData Sheet December 200140A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oCThe HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCswitching device combining the best features of MOSFETs Short Circuit Ratedand bipolar transistors. The device has

6.1. hgtg20n60b3.pdf Size:194K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3Data Sheet October 200440A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oCvoltage switching devices combining the best features of 600V Switching SOA CapabilityMOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCh

 8.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

8.2. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4, HGTP20N60A4Data Sheet December 2001600V, SMPS Series N-Channel IGBTs FeaturesThe HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20Ahigh voltage switching devices combining the best features 200kHz Operation at 390V, 12Aof MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capabilityhigh input impedance of a

 8.3. hgtg20n60a4d.pdf Size:148K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4DData Sheet February 2009600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20AThe HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12Adevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance o

8.4. hgtg20n60c3r.pdf Size:112K _harris_semi

G20N60B3D
G20N60B3D

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

Другие IGBT... G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .

 

 
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