IXGT4N250C Todos los transistores

 

IXGT4N250C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGT4N250C
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 2500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 29 nS
   Coesⓘ - Capacitancia de salida, typ: 52 pF
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXGT4N250C Datasheet (PDF)

 ..1. Size:156K  ixys
ixgt4n250c.pdf pdf_icon

IXGT4N250C

Advance Technical InformationHigh VoltageVCES = 2500VIXGT4N250CIGBTsIXGH4N250CIC110 = 4AVCE(sat) 6.0VTO-268 (IXGT)GSymbol Test Conditions Maximum Ratings EC (Tab)VCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 13 AIC110 TC = 110C 4 A

 9.1. Size:162K  ixys
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf pdf_icon

IXGT4N250C

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V

 9.2. Size:291K  ixys
ixgh40n60b ixgt40n60b.pdf pdf_icon

IXGT4N250C

IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C

 9.3. Size:168K  ixys
ixgt40n120a2.pdf pdf_icon

IXGT4N250C

IXGH 40N120A2IXGT 40N120A2IXGH 40N120A2 VCES = 1200 VHigh Voltage IGBTIXGT 40N120A2 IC25 = 75 ALow VCE(sat)VCE(sat) 2.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VCES TJ = 25C to 150C 1200 VVCES TJ = 25C to 150C 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C, IGBT chip capabilit

Otros transistores... IXGT40N120B2D1 , IXGT40N60B , IXGT40N60B2 , IXGT40N60B2D1 , IXGT40N60C , IXGT40N60C2 , IXGT40N60C2D1 , IXGT45N120 , SGP30N60 , IXGT50N60B2 , IXGT50N60C2 , IXGT50N90B2 , IXGT60N60B2 , IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 .

History: CM200DY-12H | F3L300R12MT4-B22 | ISL9V3040D3STV | 6MBP25VBA120-50 | DM2G200SH12A | AUIRG4BC30S-S | SKM400GA124D

 

 
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