IXGT4N250C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGT4N250C
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 2500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 29 nS
Coesⓘ - Capacitancia de salida, typ: 52 pF
Qgⓘ - Carga total de la puerta, typ: 57 nC
Paquete / Cubierta: TO268
Búsqueda de reemplazo de IXGT4N250C - IGBT
IXGT4N250C Datasheet (PDF)
ixgt4n250c.pdf
Advance Technical InformationHigh VoltageVCES = 2500VIXGT4N250CIGBTsIXGH4N250CIC110 = 4AVCE(sat) 6.0VTO-268 (IXGT)GSymbol Test Conditions Maximum Ratings EC (Tab)VCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 13 AIC110 TC = 110C 4 A
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf
HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V
ixgh40n60b ixgt40n60b.pdf
IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C
ixgt40n120a2.pdf
IXGH 40N120A2IXGT 40N120A2IXGH 40N120A2 VCES = 1200 VHigh Voltage IGBTIXGT 40N120A2 IC25 = 75 ALow VCE(sat)VCE(sat) 2.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VCES TJ = 25C to 150C 1200 VVCES TJ = 25C to 150C 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C, IGBT chip capabilit
ixgt40n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
ixgt40n60c2d1.pdf
HiPerFASTTM IGBTsVCES = 600VIXGT40N60C2D1IC110 = 40Aw/ DiodeIXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1tfi(typ) = 32nsC2-Class High Speed IGBTsTO-268 (IXGT)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-268 (IXGJ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V
ixgt40n60b2d1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)
ixgt40n60c.pdf
VCES = 600 VIXGH 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGT 40N60CLightspeedTM SeriesVCE(sat) = 2.5 Vtfi typ = 75 nsPreliminary DataTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC110 TC = 11
ixgh40n60b2d1 ixgt40n60b2d1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)
ixgh40n60c2 ixgt40n60c2.pdf
VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1
ixgt40n60c2.pdf
VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1
ixgh40n60b2 ixgt40n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
ixgt45n120.pdf
IXGH 45N120 VCES = 1200 VIXGT 45N120 IC25 = 75 AIGBTVCE(sat) = 2.5 VHigh Voltage, Low VCE(sat)tfi(typ) = 390 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 ATO-247 AD (I
ixgt40n120b2d1.pdf
High Voltage IGBTs VCES = 1200VIXGH40N120B2D1w/DiodeIXGT40N120B2D1IC110 = 40AVCE(sat) 3.5Vtfi(typ) = 140nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VGC (TAB)CVGEM Transient 30 VEIC25 TC = 25C (Limited by Lead) 75 AIC110 TC =
Otros transistores... IXGT40N120B2D1 , IXGT40N60B , IXGT40N60B2 , IXGT40N60B2D1 , IXGT40N60C , IXGT40N60C2 , IXGT40N60C2D1 , IXGT45N120 , IRGP4066D , IXGT50N60B2 , IXGT50N60C2 , IXGT50N90B2 , IXGT60N60B2 , IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2