IXGT4N250C Specs and Replacement

Type Designator: IXGT4N250C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 13 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.6 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 52 pF

Package: TO268

 IXGT4N250C Substitution

- IGBTⓘ Cross-Reference Search

 

IXGT4N250C datasheet

 ..1. Size:156K  ixys
ixgt4n250c.pdf pdf_icon

IXGT4N250C

Advance Technical Information High Voltage VCES = 2500V IXGT4N250C IGBTs IXGH4N250C IC110 = 4A VCE(sat) 6.0V TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 13 A IC110 TC = 110 C 4 A... See More ⇒

 9.1. Size:162K  ixys
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf pdf_icon

IXGT4N250C

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C (TAB) C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V... See More ⇒

 9.2. Size:291K  ixys
ixgh40n60b ixgt40n60b.pdf pdf_icon

IXGT4N250C

IXGH 40N60B VCES = 600 V HiPerFASTTM IGBT IXGT 40N60B IC25 = 75 A VCE(sat) = 2.1 V tfi = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC110 TC = 110 C40 A TO-268 (D3) ICM TC = 25 C... See More ⇒

 9.3. Size:168K  ixys
ixgt40n120a2.pdf pdf_icon

IXGT4N250C

IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 VCES = 1200 V High Voltage IGBT IXGT 40N120A2 IC25 = 75 A Low VCE(sat) VCE(sat) 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VCES TJ = 25 C to 150 C 1200 V VCES TJ = 25 C to 150 C 1200 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C, IGBT chip capabilit... See More ⇒

Specs: IXGT40N120B2D1, IXGT40N60B, IXGT40N60B2, IXGT40N60B2D1, IXGT40N60C, IXGT40N60C2, IXGT40N60C2D1, IXGT45N120, RJH60F7BDPQ-A0, IXGT50N60B2, IXGT50N60C2, IXGT50N90B2, IXGT60N60B2, IXGT60N60C2, IXGT60N60C3D1, IXGT64N60A3, IXGT64N60B3

Keywords - IXGT4N250C transistor spec

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