IXGT60N60C3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT60N60C3D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 380 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 33 nS

Coesⓘ - Capacitancia de salida, typ: 210 pF

Encapsulados: TO268

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IXGT60N60C3D1 datasheet

 ..1. Size:236K  ixys
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IXGT60N60C3D1

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGEM Transient 30 V IC25

 ..2. Size:284K  ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf pdf_icon

IXGT60N60C3D1

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1* *Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGE

 4.1. Size:583K  ixys
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IXGT60N60C3D1

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 4.2. Size:581K  ixys
ixgt60n60c2.pdf pdf_icon

IXGT60N60C3D1

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

Otros transistores... IXGT40N60C2D1, IXGT45N120, IXGT4N250C, IXGT50N60B2, IXGT50N60C2, IXGT50N90B2, IXGT60N60B2, IXGT60N60C2, TGAN60N60F2DS, IXGT64N60A3, IXGT64N60B3, IXGT6N170, IXGT6N170A, IXGT72N60A3, IXGT72N60B3, IXGV25N250S, IXGX100N170