All IGBT. IXGT60N60C3D1 Datasheet

 

IXGT60N60C3D1 Datasheet and Replacement


   Type Designator: IXGT60N60C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 380 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qg ⓘ - Total Gate Charge, typ: 115 nC
   Package: TO268
 

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IXGT60N60C3D1 Datasheet (PDF)

 ..1. Size:236K  ixys
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IXGT60N60C3D1

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1IC110 = 60Awith Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGEM Transient 30 VIC25

 ..2. Size:284K  ixys
 ixgh60n60c3d1 ixgt60n60c3d1.pdf pdf_icon

IXGT60N60C3D1

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60Awith Diode IXGT60N60C3D1**Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGE

 4.1. Size:583K  ixys
 ixgh60n60c2 ixgt60n60c2.pdf pdf_icon

IXGT60N60C3D1

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

 4.2. Size:581K  ixys
 ixgt60n60c2.pdf pdf_icon

IXGT60N60C3D1

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

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Datasheet: IXGT40N60C2D1 , IXGT45N120 , IXGT4N250C , IXGT50N60B2 , IXGT50N60C2 , IXGT50N90B2 , IXGT60N60B2 , IXGT60N60C2 , RJH60F5DPQ-A0 , IXGT64N60A3 , IXGT64N60B3 , IXGT6N170 , IXGT6N170A , IXGT72N60A3 , IXGT72N60B3 , IXGV25N250S , IXGX100N170 .

History: NGTB30N120LWG | SHSMG1010

Keywords - IXGT60N60C3D1 transistor datasheet

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