IXGT64N60B3 Todos los transistores

 ..1. Size:163K  ixys
 ixgt64n60b3.pdf

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT VCE(sat) 1.8V IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30

 5.1. Size:192K  ixys
 ixgt64n60a3.pdf

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to VCE(sat) 1.35V 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C IC11

 9.1. Size:236K  ixys
 ixgt60n60c3d1.pdf

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGEM Transient 30 V IC25

 9.2. Size:583K  ixys
 ixgh60n60c2 ixgt60n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 9.3. Size:284K  ixys
 ixgh60n60c3d1 ixgt60n60c3d1.pdf

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1* *Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGE

 9.4. Size:181K  ixys
 ixgt6n170 ixgh6n170.pdf

VCES = 1700V High Voltage IXGT6N170 IC90 = 6A IGBT IXGH6N170 VCE(sat) 4.0V tfi(typ) = 290ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 12 A IC90 TC =

 9.5. Size:576K  ixys
 ixgt60n60b2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat)

 9.6. Size:197K  ixys
 ixgt6n170ahv.pdf

Advance Technical Information High Voltage VCES = 1700V IXGT6N170AHV IC25 = 6A IGBT VCE(sat) 7.0V tfi(typ) = 32ns TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 1700 V G = Gate C = Collector VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V E = Emiiter Tab = Collector VGES Continuous 20 V VGEM Transient 30 V IC25 TC

 9.7. Size:94K  ixys
 ixgt60n60.pdf

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C,

 9.8. Size:581K  ixys
 ixgt60n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 9.9. Size:197K  ixys
 ixgt6n170a ixgh6n170a.pdf

VCES = 1700V High Voltage IXGT6N170A IC25 = 6A IGBT IXGH6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 6 A IC110 TC

 9.10. Size:95K  ixys
 ixgh60n60 ixgk60n60 ixgt60n60.pdf

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C,

 9.11. Size:78K  ixys
 ixgt6n170.pdf

IXGH 6N170 High Voltage VCES = 1700 V IXGT 6N170 IC25 = 12 A IGBT VCE(sat) = 4.0 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C12 A TO-247 AD (IXGH) IC90 TC = 90 C6 A ICM TC = 25 C, 1 ms 24 A SSOA

 9.12. Size:578K  ixys
 ixgh60n60b2 ixgt60n60b2.pdf

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat)

 9.13. Size:189K  ixys
 ixgt6n170a.pdf

Preliminary Technical Information High Voltage VCES = 1700V IXGH6N170A IGBTs IC25 = 6A IXGT6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 6 A