IXGT64N60B3
Даташит. Аналоги. Параметры и характеристики.
Наименование: IXGT64N60B3
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 460
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
64(110°C)
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.59
V @25℃
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 41
nS
Coesⓘ - Выходная емкость, типовая: 260
pF
Тип корпуса:
TO268
- подбор IGBT транзистора по параметрам
IXGT64N60B3
Datasheet (PDF)
..1. Size:163K ixys
ixgt64n60b3.pdf 

Preliminary Technical InformationIXGH64N60B3 VCES = 600VGenX3TM 600V IGBTIXGT64N60B3IC110 = 64AMedium speed low Vsat PTVCE(sat) 1.8VIGBTs for 5 - 40kHz switchingtfi(typ) = 88nsSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30
5.1. Size:192K ixys
ixgt64n60a3.pdf 

Preliminary Technical InformationIXGH64N60A3 VCES = 600VGenX3TM 600V IGBTIXGT64N60A3IC110 = 64AUltra-lowVsat PT IGBTs for up toVCE(sat) 1.35V5 kHz switchingSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC (TAB)CIC11
9.1. Size:236K ixys
ixgt60n60c3d1.pdf 

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1IC110 = 60Awith Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGEM Transient 30 VIC25
9.2. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf 

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
9.3. Size:284K ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf 

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60Awith Diode IXGT60N60C3D1**Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGE
9.4. Size:181K ixys
ixgt6n170 ixgh6n170.pdf 

VCES = 1700VHigh Voltage IXGT6N170IC90 = 6AIGBT IXGH6N170VCE(sat) 4.0Vtfi(typ) = 290nsTO-268 (IXGT)Symbol Test Conditions Maximum Ratings GEVCES TC = 25C to 150C 1700 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 12 AIC90 TC =
9.5. Size:576K ixys
ixgt60n60b2.pdf 

Advance Technical DataVCES = 600 VIXGH 60N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 60N60B2VCE(sat)
9.6. Size:197K ixys
ixgt6n170ahv.pdf 

Advance Technical InformationHigh Voltage VCES = 1700VIXGT6N170AHVIC25 = 6AIGBTVCE(sat) 7.0Vtfi(typ) = 32nsTO-268GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 1700 VG = Gate C = CollectorVCGR TJ = 25C to 150C, RGE = 1M 1700 VE = Emiiter Tab = CollectorVGES Continuous 20 VVGEM Transient 30 VIC25 TC
9.7. Size:94K ixys
ixgt60n60.pdf 

VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,
9.8. Size:581K ixys
ixgt60n60c2.pdf 

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
9.9. Size:197K ixys
ixgt6n170a ixgh6n170a.pdf 

VCES = 1700VHigh Voltage IXGT6N170AIC25 = 6AIGBT IXGH6N170AVCE(sat) 7.0Vtfi(typ) = 32nsTO-268 (IXGT)Symbol Test Conditions Maximum Ratings GEVCES TC = 25C to 150C 1700 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 6 AIC110 TC
9.10. Size:95K ixys
ixgh60n60 ixgk60n60 ixgt60n60.pdf 

VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,
9.11. Size:78K ixys
ixgt6n170.pdf 

IXGH 6N170High Voltage VCES = 1700 VIXGT 6N170IC25 = 12 AIGBTVCE(sat) = 4.0 Vtfi(typ) = 290 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C12 ATO-247 AD (IXGH)IC90 TC = 90C6 AICM TC = 25C, 1 ms 24 ASSOA
9.12. Size:578K ixys
ixgh60n60b2 ixgt60n60b2.pdf 

Advance Technical DataVCES = 600 VIXGH 60N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 60N60B2VCE(sat)
9.13. Size:189K ixys
ixgt6n170a.pdf 

Preliminary Technical InformationHigh Voltage VCES = 1700VIXGH6N170AIGBTsIC25 = 6AIXGT6N170A VCE(sat) 7.0V tfi(typ) = 32nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGC C (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC25 TC = 25C 6 A
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History: NGD8201B
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