IXGT6N170A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGT6N170A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 75 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 7(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 20 pF
Qgⓘ - Carga total de la puerta, typ: 18.5 nC
Paquete / Cubierta: TO268
Búsqueda de reemplazo de IXGT6N170A - IGBT
IXGT6N170A Datasheet (PDF)
ixgt6n170a ixgh6n170a.pdf
VCES = 1700VHigh Voltage IXGT6N170AIC25 = 6AIGBT IXGH6N170AVCE(sat) 7.0Vtfi(typ) = 32nsTO-268 (IXGT)Symbol Test Conditions Maximum Ratings GEVCES TC = 25C to 150C 1700 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 6 AIC110 TC
ixgt6n170a.pdf
Preliminary Technical InformationHigh Voltage VCES = 1700VIXGH6N170AIGBTsIC25 = 6AIXGT6N170A VCE(sat) 7.0V tfi(typ) = 32nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGC C (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC25 TC = 25C 6 A
ixgt6n170ahv.pdf
Advance Technical InformationHigh Voltage VCES = 1700VIXGT6N170AHVIC25 = 6AIGBTVCE(sat) 7.0Vtfi(typ) = 32nsTO-268GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 1700 VG = Gate C = CollectorVCGR TJ = 25C to 150C, RGE = 1M 1700 VE = Emiiter Tab = CollectorVGES Continuous 20 VVGEM Transient 30 VIC25 TC
ixgt6n170 ixgh6n170.pdf
VCES = 1700VHigh Voltage IXGT6N170IC90 = 6AIGBT IXGH6N170VCE(sat) 4.0Vtfi(typ) = 290nsTO-268 (IXGT)Symbol Test Conditions Maximum Ratings GEVCES TC = 25C to 150C 1700 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 12 AIC90 TC =
ixgt6n170.pdf
IXGH 6N170High Voltage VCES = 1700 VIXGT 6N170IC25 = 12 AIGBTVCE(sat) = 4.0 Vtfi(typ) = 290 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C12 ATO-247 AD (IXGH)IC90 TC = 90C6 AICM TC = 25C, 1 ms 24 ASSOA
Otros transistores... IXGT50N60C2 , IXGT50N90B2 , IXGT60N60B2 , IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 , IXGT6N170 , GT30F125 , IXGT72N60A3 , IXGT72N60B3 , IXGV25N250S , IXGX100N170 , IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2