IXGX12N90C Todos los transistores

 ..1. Size:141K  ixys
 ixgx12n90c.pdf

HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A PLUS 247 (IXGX) ICM TC = 25

 8.1. Size:197K  ixys
 ixgk120n60b3-ixgx120n60b3.pdf

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG

 8.2. Size:194K  ixys
 ixgx120n60b3.pdf

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG

 8.3. Size:211K  ixys
 ixgx120n60a3.pdf

GenX3TM A3-Class IXGK120N60A3 VCES = 600V IXGX120N60A3 IC110 = 120A IGBTS VCE(sat) 1.35V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G (TAB) C VGES Continuous 20 V E E VGEM Transient 30 V IC25 TC = 25 C 200 A PLUS 2

 8.4. Size:925K  ixys
 ixgk120n60c2 ixgx120n60c2.pdf

ADVANCE TECHNICAL INFORMATION VCES = 600 V HiPerFASTTM IGBT IXGK 120N60C2 IC110 = 120 A Lightspeed 2TM Series IXGX 120N60C2 VCE(sat) = 2.5 V tfi(typ) = 45 ns Symbol Test Conditions Maximum Ratings TO-264(IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C (limited by leads)

 8.5. Size:123K  ixys
 ixgx120n120b3 ixgk120n120b3.pdf

Advance Technical Information VCES = 1200V IXGK120N120B3 GenX3TM 1200V IGBTs IC90 = 120A IXGX120N120B3 VCE(sat) 3.0V High Speed Low Vsat PT IGBTs for 3-20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247TM (IXG

 8.6. Size:601K  ixys
 ixgk120n60b ixgx120n60b.pdf

HiPerFASTTM IGBT IXGK 120N60B VCES = 600 V IXGX 120N60B IC25 = 200 A VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXGX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C 200 A TO-264 AA IC90 TC = 90 C 120 A (IXGK) IL(RMS) External lead limit 76 A ICM TC

 8.7. Size:215K  ixys
 ixgx120n120a3.pdf

Preliminary Technical Information GenX3TM A3-Class VCES = 1200V IXGK120N120A3 IC110 = 120A IGBTs IXGX120N120A3 VCE(sat) 2.20V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C (TAB) E E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS 247T

 8.8. Size:186K  ixys
 ixgx120n60c2.pdf

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGK120N60C2 Lightspeed 2TM Series IC110 = 120A IXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC25 TC = 25

 8.9. Size:154K  ixys
 ixgx120n60b.pdf

HiPerFASTTM IGBTs VCES = 600V IXGK120N60B IC90 = 120A IXGX120N60B VCE(sat) 2.1V TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 200 A IC90 TC = 90 C 120 A ILRMS Termin