IXGX320N60A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGX320N60A3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1000 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 320 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃

trⓘ - Tiempo de subida, typ: 68 nS

Coesⓘ - Capacitancia de salida, typ: 985 pF

Encapsulados: PLUS247

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IXGX320N60A3 datasheet

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IXGX320N60A3

GenX3TM 600V IGBTs VCES = 600V IXGK320N60A3 IC25 = 320A IXGX320N60A3 VCE(sat) 1.25V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C Tab E E VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX) IC25 TC = 25 C (C

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IXGX320N60A3

Preliminary Technical Information GenX3TM 600V VCES = 600V IXGK320N60B3 IC90 = 320A IGBTs IXGX320N60B3 VCE(sat) 1.6V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM T

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 ixgx32n170ah1.pdf pdf_icon

IXGX320N60A3

IXGX 32N170AH1 VCES = 1700 V High Voltage IGBT IC25 = 32 A with Diode VCE(sat) = 5.0 V tfi(typ) = 50 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C32 A G = Gate, C = Collector, IC90 TC = 90 C21 A E = Emitter, TAB =

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 ixgx32n170h1.pdf pdf_icon

IXGX320N60A3

Advance Technical Information IXGX 32N170H1 VCES = 1700 V High Voltage IC25 = 75 A IGBT with Diode VCE(sat) = 3.3 V tfi(typ) = 290 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C75 A G = Gate, C = Collector, IC90 TC

MOSTRAR MÁS

Otros transistores... IXGX100N170, IXGX120N120A3, IXGX120N120B3, IXGX120N60A3, IXGX120N60B3, IXGX120N60C2, IXGX12N90C, IXGX28N140B3H1, FGL60N100BNTD, IXGX320N60B3, IXGX32N170AH1, IXGX32N170H1, IXGX35N120B, IXGX35N120BD1, IXGX35N120C, IXGX35N120CD1, IXGX400N30A