IXGX320N60A3 Specs and Replacement

Type Designator: IXGX320N60A3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1000 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 320 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.05 V @25℃

tr ⓘ - Rise Time, typ: 68 nS

Coesⓘ - Output Capacitance, typ: 985 pF

Package: PLUS247

 IXGX320N60A3 Substitution

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IXGX320N60A3 datasheet

 ..1. Size:199K  ixys
 ixgx320n60a3.pdf pdf_icon

IXGX320N60A3

GenX3TM 600V IGBTs VCES = 600V IXGK320N60A3 IC25 = 320A IXGX320N60A3 VCE(sat) 1.25V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C Tab E E VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX) IC25 TC = 25 C (C... See More ⇒

 4.1. Size:193K  ixys
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IXGX320N60A3

Preliminary Technical Information GenX3TM 600V VCES = 600V IXGK320N60B3 IC90 = 320A IGBTs IXGX320N60B3 VCE(sat) 1.6V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM T... See More ⇒

 8.1. Size:129K  ixys
 ixgx32n170ah1.pdf pdf_icon

IXGX320N60A3

IXGX 32N170AH1 VCES = 1700 V High Voltage IGBT IC25 = 32 A with Diode VCE(sat) = 5.0 V tfi(typ) = 50 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C32 A G = Gate, C = Collector, IC90 TC = 90 C21 A E = Emitter, TAB =... See More ⇒

 8.2. Size:520K  ixys
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IXGX320N60A3

Advance Technical Information IXGX 32N170H1 VCES = 1700 V High Voltage IC25 = 75 A IGBT with Diode VCE(sat) = 3.3 V tfi(typ) = 290 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C75 A G = Gate, C = Collector, IC90 TC... See More ⇒

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Specs: IXGX100N170, IXGX120N120A3, IXGX120N120B3, IXGX120N60A3, IXGX120N60B3, IXGX120N60C2, IXGX12N90C, IXGX28N140B3H1, FGL60N100BNTD, IXGX320N60B3, IXGX32N170AH1, IXGX32N170H1, IXGX35N120B, IXGX35N120BD1, IXGX35N120C, IXGX35N120CD1, IXGX400N30A

Keywords - IXGX320N60A3 transistor spec

 IXGX320N60A3 cross reference
 IXGX320N60A3 equivalent finder
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