IXGX55N120A3H1 Todos los transistores

Advance Technical Information GenX3TM 1200V VCES = 1200V IXGK55N120A3H1 IC110 = 55A IGBTs w/ Diode IXGX55N120A3H1 VCE(sat) 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V E E VGES Continuous 20 V VGEM Trans

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I

IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A PLUS247 IC90 TC = 90 C50 A (IXGX) ICM TC = 25 C, 1 m

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IXGK50N120C3H1 IC100 = 50A IGBTs w/ Diode IXGX50N120C3H1 VCE(sat) 4.2V tfi(typ) = 64ns High-Speed PT IGBTs for 20 - 50 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 1200 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V PLUS247 (IXGX) V

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transien

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transien

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient