IXGX55N120A3H1 Todos los transistores

 

IXGX55N120A3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGX55N120A3H1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 460 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 125 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 42 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Qgⓘ - Carga total de la puerta, typ: 185 nC
   Paquete / Cubierta: PLUS247
     - Selección de transistores por parámetros

 

IXGX55N120A3H1 Datasheet (PDF)

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 ixgx55n120a3h1.pdf pdf_icon

IXGX55N120A3H1

Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK55N120A3H1IC110 = 55AIGBTs w/ DiodeIXGX55N120A3H1 VCE(sat) 2.3V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Trans

 9.1. Size:494K  ixys
 ixgx50n60b2d1.pdf pdf_icon

IXGX55N120A3H1

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 9.2. Size:121K  ixys
 ixgx50n60a2d1.pdf pdf_icon

IXGX55N120A3H1

Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I

 9.3. Size:88K  ixys
 ixgx50n60bd1.pdf pdf_icon

IXGX55N120A3H1

IXGK 50N60BD1VCES = 600 VHiPerFASTTMIXGX 50N60BD1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 85 nsSymbol Test Conditions Maximum RatingsTO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 APLUS247IC90 TC = 90C50 A(IXGX)ICM TC = 25C, 1 m

MOSTRAR MÁS

Otros transistores... IXGX400N30A3 , IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 , IXGX50N60B2D1 , IXGX50N60BD1 , IXGX50N60C2D1 , IXGX50N90B2D1 , FGW75N60HD , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 .

History: APT43GA90BD30 | APT44GA60S | FGW30N60VD | RCF1565SL1

 

 
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