IXGX55N120A3H1 Datasheet and Replacement
Type Designator: IXGX55N120A3H1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 460
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 125
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.85
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 42
nS
Coesⓘ - Output Capacitance, typ: 300
pF
Qgⓘ -
Total Gate Charge, typ: 185
nC
Package:
PLUS247
- IGBT Cross-Reference
IXGX55N120A3H1 Datasheet (PDF)
..1. Size:120K ixys
ixgx55n120a3h1.pdf 
Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK55N120A3H1IC110 = 55AIGBTs w/ DiodeIXGX55N120A3H1 VCE(sat) 2.3V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Trans
9.1. Size:494K ixys
ixgx50n60b2d1.pdf
Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C
9.2. Size:121K ixys
ixgx50n60a2d1.pdf
Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I
9.3. Size:88K ixys
ixgx50n60bd1.pdf
IXGK 50N60BD1VCES = 600 VHiPerFASTTMIXGX 50N60BD1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 85 nsSymbol Test Conditions Maximum RatingsTO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 APLUS247IC90 TC = 90C50 A(IXGX)ICM TC = 25C, 1 m
9.4. Size:136K ixys
ixgx50n60au1.pdf
Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC
9.5. Size:493K ixys
ixgx50n60c2d1.pdf
IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25
9.6. Size:217K ixys
ixgx50n120c3h1.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IXGK50N120C3H1IC100 = 50AIGBTs w/ Diode IXGX50N120C3H1VCE(sat) 4.2Vtfi(typ) = 64nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 1200 VTabVCGR TJ = 25C to 150C, RGE = 1M 1200 VPLUS247 (IXGX)V
9.7. Size:136K ixys
ixgx50n60au1s.pdf
Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC
9.8. Size:628K ixys
ixgk50n60c2d1 ixgx50n60c2d1.pdf
IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25
9.9. Size:198K ixys
ixgx50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
9.10. Size:203K ixys
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
9.11. Size:627K ixys
ixgk50n60b2d1 ixgx50n60b2d1.pdf
Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C
9.12. Size:143K ixys
ixgk50n60a2u1 ixgx50n60a2u1.pdf
Advance Technical InformationIXGK 50N60A2U1 VCES = 600 VIGBT with DiodeIXGX 50N60A2U1IC25 = 75 AVCE(sat) = 1.6 VLow Saturation Voltage IGBTwith Low Forward Drop DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient
Datasheet: IXGX400N30A3
, IXGX40N60BD1
, IXGX50N120C3H1
, IXGX50N60A2D1
, IXGX50N60B2D1
, IXGX50N60BD1
, IXGX50N60C2D1
, IXGX50N90B2D1
, FGW75N60HD
, IXGX60N60B2D1
, IXGX60N60C2D1
, IXGX64N60B3D1
, IXGX72N60A3H1
, IXGX72N60B3H1
, IXGX72N60C3H1
, IXGX75N250
, IXGX82N120A3
.
History: SRE50N120FSUD9
Keywords - IXGX55N120A3H1 transistor datasheet
IXGX55N120A3H1 cross reference
IXGX55N120A3H1 equivalent finder
IXGX55N120A3H1 lookup
IXGX55N120A3H1 substitution
IXGX55N120A3H1 replacement
