IXGX64N60B3D1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGX64N60B3D1 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 460 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 64(110°C) A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.59 V @25℃
trⓘ - Tiempo de subida, typ: 41 nS
Coesⓘ - Capacitancia de salida, typ: 260 pF
Encapsulados: PLUS247
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IXGX64N60B3D1 datasheet
ixgx64n60b3d1.pdf
VCES = 600V GenX3TM 600V IGBT IXGK64N60B3D1 IC110 = 64A with Diode IXGX64N60B3D1 VCE(sat) 1.8V Medium speed low Vsat PT tfi(typ) = 88ns IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC110
ixgx60n60b2d1.pdf
Advance Technical Data IXGK60N60B2D1 VCES = 600 V HiPerFASTTM IXGX 60N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat)
ixgk60n60b2d1 ixgx60n60b2d1.pdf
Advance Technical Data IXGK60N60B2D1 VCES = 600 V HiPerFASTTM IXGX 60N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat)
ixgx60n60c2d1.pdf
IXGK 60N60C2D1 VCES = 600 V HiPerFASTTM IXGX 60N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 35 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads)
Otros transistores... IXGX50N60A2D1, IXGX50N60B2D1, IXGX50N60BD1, IXGX50N60C2D1, IXGX50N90B2D1, IXGX55N120A3H1, IXGX60N60B2D1, IXGX60N60C2D1, IKW40N120H3, IXGX72N60A3H1, IXGX72N60B3H1, IXGX72N60C3H1, IXGX75N250, IXGX82N120A3, IXGX82N120B3, IXGY2N120, IXLF19N250A
History: MMG200B065PD6EN | APT80GP60J | AOT5B65M1
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